1999. 6. 8
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SEMICONDUCTOR
TECHNICAL DATA
KRA301E~KRA306E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+_
+
_
TYPE NO.
R1(k )
R2(k )
KRA301E
4.7
4.7
KRA302E
10
10
KRA303E
22
22
KRA304E
47
47
KRA305E
2.2
47
KRA306E
4.7
47
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA301E 306E
V
O
-50
V
Input Voltage
KRA301E
V
I
-20, 10
V
KRA302E
-30, 10
KRA303E
-40, 10
KRA304E
-40, 10
KRA305E
-12, 5
KRA306E
-20, 5
Output Current
KRA301E 306E
I
O
-100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA301E
KRA302E
KRA303E
KRA304E
KRA305E
KRA306E
MARK
PA
PB
PC
PD
PE
PF
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
R1
R2
COMMON(+)
OUT
IN
MARK SPEC
Type Name
Marking